Dislocation-mediated shear amorphization in boron carbide

Depressurization amorphization of single-crystal boron carbide.

We report depressurization amorphization of single-crystal boron carbide (B4C) investigated by in situ high-pressure Raman spectroscopy. It was found that localized amorphization of B4C takes place during unloading from high pressures, and nonhydrostatic stresses play a critical role in the high-pressure phase transition. First-principles molecular dynamics simulations reveal that the depressur...

Boron carbide/n-silicon carbide heterojunction diodes

Compression and Associated Properties of Boron Carbide

Our present work presents a direct association of the observed loss of shear strength in boron carbide under plane shock wave compression to amorphization in boron carbide under triaxial stress compression. This evidence is obtained from in-situ measurement of Raman, and infrared vibrational spectra of boron carbide confined in a Diamond Anvil Cell (DAC) under hydrostatic and non-hydrostatic pr...

Magnetoresistance in boron carbide junctions

Irradiation-induced defect clustering and amorphization in silicon carbide

Previous computer simulations of multiple 10 keV Si cascades in 3C–SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, r...